利用金属有机化合物化学气相沉积（MOCVD）技术，在不同晶面的蓝宝石（Al₂O₃）衬底上实现了极性（0002）面、半极性（11-22）面和非极性（11-20）面InN薄膜的外延生长，并通过多种表征手段对三个不同极性面InN薄膜的结构和光学特性进行了系统研究。X射线衍射（XRD）曲线展示了（0002）、（11-22）和（11-20）面InN较强的衍射峰，表明InN薄膜具有较高的成膜质量。通过扫描电子显微镜（SEM）表面图发现，极性（0002）面InN的表面形貌较光滑，而半极性和非极性InN表面均存在未完全合并的孔洞。光致发光（PL）光谱展示，不同极性面InN的峰值能量在0.63 eV附近，并从极性、半极性到非极性逐渐红移。此外，可见-红外分光光度计测得的透射谱显示，极性（0002）面InN的吸收边约为0.85 eV，而半极性（11-22）面和非极性（11-20）面InN的吸收边约为0.78 eV，表明极性InN具有更大的斯托克斯位移。

Plasmonic nanolaser as a new type of ultra-small laser, has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters. Normally, the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses, which leads to the low quality factor. In this work, InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated, where the overlap between SPs and excitons can be enhanced. The lasing threshold is calculated to be ~6.36 kW/cm², where the full width at half maximum (FWHM) drops from 27 to 4 nm. And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns. Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material, which improve the near field coupling between SPs and excitons. Such plasmonic laser should be useful in data storage applications, biological application, light communication, especially for optoelectronic devices integrated into a system on a chip.

We fabricated p-i-n tunnel junction (TJ) contacts for hole injection on c-plane green micro-light-emitting diodes (micro-LEDs) by a hybrid growth approach using plasma-assisted molecular beam epitaxy (PA-MBE) and metal–organic chemical vapor deposition (MOCVD). The TJ was formed by an MBE-grown ultra-thin unintentionally doped InGaN polarization layer and an n++/n+-GaN layer on the activated p++-GaN layer prepared by MOCVD. This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling. Compared to standard micro-LEDs, the TJ micro-LEDs showed a reduced device resistance, enhanced electroluminescence intensity, and a reduced efficiency droop. The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer. All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths.

Hybrid white micro-pillar structure light emitting diodes (LEDs) have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS ((CuInS₂-ZnS)/ZnS) core/shell quantum dots. The fabricated hybrid white micro-LEDs have good electrical properties, which are manifested in relatively low turn-on voltage and reverse leakage current. High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization, in which the corresponding color coordinates are calculated to be (0.3303, 0.3501) and the calculated color temperature is 5596 K. This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays, bioinstrumentation and visible light communication.